| Titre : |
Semiconductor Equations |
| Type de document : |
texte imprimé |
| Auteurs : |
P. A. Markowich, Auteur ; A. Ringhofer Christian, Auteur ; Schmeiser Christian, Auteur |
| Editeur : |
Paris : springer verlag |
| Année de publication : |
1990 |
| Importance : |
258p |
| Présentation : |
couv:ill |
| Format : |
24cm |
| ISBN/ISSN/EAN : |
978-3-211-82157-2 |
| Langues : |
Français (fre) |
| Index. décimale : |
E530 |
| Résumé : |
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling res. |
Semiconductor Equations [texte imprimé] / P. A. Markowich, Auteur ; A. Ringhofer Christian, Auteur ; Schmeiser Christian, Auteur . - Paris : springer verlag, 1990 . - 258p : couv:ill ; 24cm. ISBN : 978-3-211-82157-2 Langues : Français ( fre)
| Index. décimale : |
E530 |
| Résumé : |
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling res. |
|  |
Affiner la recherche Interroger des sources externes
